<rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom" xmlns:media="http://search.yahoo.com/mrss/"><channel><atom:link href="https://www.jeolusa.com/DesktopModules/Blog/API/Syndication/GetRssFeeds?Category=electron-beam-lithography&amp;mid=5753&amp;PortalId=2&amp;tid=783&amp;ItemCount=20" rel="self" type="application/rss+xml" /><title>JEOL USA blog</title><description>Items of interest for the JEOL community</description><link>https://www.jeolusa.com/NEWS-EVENTS/Blog</link><item><title>How E-Beam Lithography Shapes the Semiconductor World</title><link>https://www.jeolusa.com/NEWS-EVENTS/Blog/PostId/196/e-beam-lithography-semiconductor</link><category>Electron Beam Lithography</category><pubDate>Wed, 01 Apr 2026 09:40:32 GMT</pubDate><description /><guid isPermaLink="false">196</guid></item><item><title>Why Does an Electron Beam Provide Such High Resolution in Lithography?</title><link>https://www.jeolusa.com/NEWS-EVENTS/Blog/PostId/195/electron-beam-high-resolution-lithography</link><category>Electron Beam Lithography</category><pubDate>Tue, 31 Mar 2026 19:15:23 GMT</pubDate><description /><guid isPermaLink="false">195</guid></item><item><title>Overcoming Key Challenges in DRAM Transistor Formation Using E-Beams</title><link>https://www.jeolusa.com/NEWS-EVENTS/Blog/PostId/194/overcoming-key-challenges-in-dram-transistor-formation-using-e-beams</link><category>Electron Beam Lithography,SEM,TEM</category><pubDate>Fri, 06 Mar 2026 14:00:09 GMT</pubDate><description /><guid isPermaLink="false">194</guid></item><item><title>What is Direct Write Lithography?</title><link>https://www.jeolusa.com/NEWS-EVENTS/Blog/PostId/125/what-is-direct-write-lithography</link><category>Electron Beam Lithography</category><pubDate>Mon, 19 Aug 2024 20:04:00 GMT</pubDate><description>&lt;h1 id="ific" class="vj-heading text-primary head-style-1"&gt;What is Direct Write Lithography?&lt;/h1&gt;&lt;div id="i064" class="vj-text text-dark paragraph-style-1"&gt;Lithography is the catchall term used to describe the various methods of patterning substrate materials (glass, silicon, metal, etc.) It is a mainstay in microelectronics as it enables the fabrication of complex structures within integrated circuits (ICs), and is increasingly used in a range of materials engineering applications where nanoscale surface features could impinge on performance.&lt;br&gt;&lt;div&gt;
&lt;/div&gt;&lt;br&gt;&lt;div&gt;Direct write lithography, alternatively termed maskless lithography, is a related technique that can create these patterns. Unlike other lithography methods, for example photolithography, direct write lithography does not need a photomask. As a result, it is generally easier to conduct due to the reduced number of mandatory stages. It is also useful for generating repeated designs.&lt;/div&gt;&lt;br&gt;&lt;div&gt;This article will provide more insights about direct write lithography.&lt;/div&gt;&lt;/div&gt;&lt;div class="list-box"&gt;&lt;ul start="1" id="ix48w" class="list text-dark"&gt;&lt;/ul&gt;&lt;/div&gt;&lt;h2 class="vj-heading text-primary head-style-1" id="i4ua1"&gt;Techniques in Direct Write Lithography&lt;/h2&gt;&lt;div class="vj-text text-dark paragraph-style-1" id="i3bk1"&gt;Direct write lithography encompasses various techniques and pattern etching options:&lt;/div&gt;&lt;div class="list-box"&gt;&lt;ul start="1" class="list text-dark" id="imuq1"&gt;&lt;li class="list-item" id="iybjp"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Direct Laser Writing:&lt;/b&gt; This method uses a spatial light-modulating micro-array to form patterns on the substrate’s photoresist by controlling laser light exposure.&lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="iet5v"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Electron Beam Lithography (EBL):&lt;/b&gt; EBL generates patterns using an electron beam, offering high resolutions below 10 nanometers, making it suitable for intricate designs.&lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="i0zla"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Focused Ion Beam (FIB) Lithography:&lt;/b&gt; This technique employs a focused ion beam to etch or deposit patterns, providing precise control over the etching or deposition process.&lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="igxd4"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Dip Pen Nanolithography:&lt;/b&gt; Utilizing probe tips, this method directly deposits material onto the substrate to form patterns.&lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="inhd7"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Proton Beam Writing: &lt;/b&gt;This involves using a focused proton beam to create patterns, similar to electron and ion beam methods but with different interaction characteristics with the substrate material.&lt;/span&gt;&lt;/li&gt;&lt;/ul&gt;&lt;/div&gt;&lt;h2 class="vj-heading text-primary head-style-1" id="iyiyp"&gt;Process of Direct Write Lithography&lt;/h2&gt;&lt;div class="vj-text text-dark paragraph-style-1" id="in1dg"&gt;The direct write lithography process is relatively straightforward, though each step can have many variations:&lt;/div&gt;&lt;div class="list-box"&gt;&lt;ol start="1" class="list ordered-list text-dark" id="im87k"&gt;&lt;li class="list-item" id="i7x87"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Resist Application: &lt;/b&gt;A substrate is coated with a resist layer.&lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="ipnyl"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Pattern Generation: &lt;/b&gt;Using computer-aided design (CAD) software, the desired pattern is defined. It is then converted to a GDSII (GDS) file containing layer information, before finally being converted into the machine language of the lithography tool. &lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="ix3wb"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Exposure: &lt;/b&gt;The exposure system, guided by the GDS file, precisely patterns the substrate.&lt;/span&gt;&lt;/li&gt;&lt;li class="list-item" id="i9qk1"&gt;&lt;span class="list-text"&gt;&lt;b&gt;Rinsing:&lt;/b&gt; The remaining resist is rinsed off, leaving a positive (or negative) pattern for subsequent etching or deposition steps.&lt;/span&gt;&lt;/li&gt;&lt;/ol&gt;&lt;/div&gt;&lt;h2 class="vj-heading text-primary head-style-1" id="irs7i"&gt;Benefits of Using Direct Write Lithography&lt;/h2&gt;&lt;div class="vj-text text-dark paragraph-style-1" id="ie0cf"&gt;Direct write lithography offers significant advantages, particularly in the area of prototyping speed. The technique eliminates the need for a photomask, allowing patterns to be altered rapidly. This facilitates quick prototyping and supports iterative design processes, making it highly efficient for developing and testing new designs. Additionally, direct write lithography techniques, such as electron beam lithography, provide high-resolution patterns with excellent definition. This ensures that the final design is accurate and detailed. The flexibility of direct write lithography is another major benefit; without a photomask, modifications to patterns can be made easily, enhancing the overall design and fabrication process.&lt;/div&gt;&lt;h2 class="vj-heading text-primary head-style-1" id="is1be"&gt;Areas That Utilize Direct Write Lithography&lt;/h2&gt;&lt;div class="vj-text text-dark paragraph-style-1" id="ipu0v"&gt;Direct write lithography plays a crucial role in the semiconductor industry, where it is essential for forming detailed patterns on silicon wafers. It is also used to create photomasks for chip production and prototype studies, contributing to the development of advanced semiconductor devices. In the field of microelectromechanical systems (MEMS), direct write lithography is employed to form actuators and sensors that are vital components of these devices. The photonics industry also utilizes this technique to generate photonic crystals and waveguides, driving advancements in photonic technologies and enabling the development of innovative optical components.&lt;/div&gt;&lt;h3 class="vj-heading text-primary head-style-1" id="iofhi"&gt;Enhancements and Future Directions&lt;/h3&gt;&lt;div class="vj-text text-dark paragraph-style-1" id="i5mvh"&gt;To enhance the capabilities of direct write lithography, the incorporation of higher accelerating voltages could significantly improve resolution. This would enable even finer patterning and greater precision in the fabrication process. Due to an increased focus on photonics and waveguides, a new method of steering the electron beam at any angle has been developed. This yields improved line edge roughness and overall pattern fidelity, resulting in a more efficient device. Thanks to the development of these capabilities, the overall usability of direct write lithography will be increased, making it more effective for a wider array of applications and further solidifying its place in advanced manufacturing technologies.&lt;/div&gt;&lt;h2 class="vj-heading text-primary head-style-1" id="ip0q6"&gt;Elevate Your Direct Write Lithography With Equipment From JEOL USA&lt;/h2&gt;&lt;div class="vj-text text-dark paragraph-style-1" id="i6s7g"&gt;The future seems optimistic for direct write lithography and its placement in different areas, such as photonics, nanotechnology, and the semiconductor industry, appears secure. Should you want to use it in your own work, why not look at the direct write lithography equipment we, JEOL USA, can offer? 
&lt;br&gt;&lt;br&gt;&lt;div&gt;Our JBX-A9 and JBX-8100FS are both e-beam direct write lithography systems. The JBX-A9 offers world class performance. It is especially ideal for an industrial setting and accepts wafers up to 300mm. For an EBL with a high throughput and greater flexibility, look to the JBX-8100FS. There are also documents listed on our website if you need additional information about direct write lithography. Let us help you select your direct write lithography technology. That way you can use excellent tools to enhance the patterns of your substrates.&lt;/div&gt;&lt;/div&gt;</description><guid isPermaLink="false">125</guid></item><item><title>An overview of electron beam lithography</title><link>https://www.jeolusa.com/NEWS-EVENTS/Blog/PostId/46/overview-electron-beam-lithography</link><category>Electron Beam Lithography</category><pubDate>Tue, 20 Sep 2022 14:57:27 GMT</pubDate><description>&lt;h2 id="iagl" class="vj-heading head-style-1 text-dark"&gt;An overview of electron beam lithography&lt;/h2&gt;&lt;div id="isxrs" class="image-box"&gt;&lt;span class="image-frame"&gt;&lt;picture class="picture-box"&gt;&lt;source type="image/webp" srcset="/Portals/2/blog/.versions/electron%20beam%20lithography%201_1280w.webp?ver=9r8-5bxJxnAxFOSPpyGGWg%3d%3d 1280w,/Portals/2/blog/.versions/electron%20beam%20lithography%201_720w.webp?ver=7_C7OKmWVZ8-3pG2nVnDnQ%3d%3d 720w,/Portals/2/blog/.versions/electron%20beam%20lithography%201_360w.webp?ver=yD-pgdo9o3WsmrLANjz9nw%3d%3d 360w" sizes="(min-width:1920px) 64vw,(min-width:1600px) 77vw,(min-width:1366px) 90vw,(min-width:1200px) 99vw,(min-width:768px) 99vw,(min-width:320px) 98vw" class="source"&gt;&lt;source srcset="/Portals/2/blog/.versions/electron%20beam%20lithography%201_1280w.JPEG?ver=lezNm9gwm9dQj0uL-LnmRQ%3d%3d 1280w,/Portals/2/blog/.versions/electron%20beam%20lithography%201_720w.JPEG?ver=8-1zdLn8Cqe31MJrby45jw%3d%3d 720w,/Portals/2/blog/.versions/electron%20beam%20lithography%201_360w.JPEG?ver=29dwsj5pSdckhhsJm_GVSA%3d%3d 360w" sizes="(min-width:1920px) 64vw,(min-width:1600px) 77vw,(min-width:1366px) 90vw,(min-width:1200px) 99vw,(min-width:768px) 99vw,(min-width:320px) 98vw" class="source"&gt;&lt;img draggable="true" loading="lazy" src="/Portals/2/blog/electron%20beam%20lithography%201.jpg?ver=Id79vhsjKZo7e0ub8ywrhw%3d%3d" id="ix9py" class="vj-image img-fluid image-link"&gt;&lt;/picture&gt;&lt;/span&gt;&lt;/div&gt;&lt;div id="idfde" class="vj-text text-dark paragraph-style-1"&gt;Electron beam lithography uses a focused electron beam to pattern the surface of a material. As electron beams can be very tightly focused and small beam sizes achieved, electron beam lithography can be used to create very intricate structures for a wide variety of nanofabrication applications.&lt;sup&gt;1&lt;/sup&gt;&lt;/div&gt;&lt;h3 id="iqcb6" class="vj-heading head-style-1 text-dark"&gt;What is the electron beam lithography process? &lt;/h3&gt;&lt;div class="spacer" id="iyu66"&gt;&lt;/div&gt;&lt;div id="i717j" class="container"&gt;&lt;div class="row"&gt;&lt;div class="col-xl-6 col-md-6 col-sm-6 col-12"&gt;&lt;div class="image-box"&gt;&lt;span class="image-frame"&gt;&lt;picture class="picture-box"&gt;&lt;source type="image/webp" srcset="/Portals/2/blog/.versions/electron%20beam%20lithography%202_800w.webp?ver=CDTc3KrKz3Zh_nsHf-qr4g%3d%3d 800w,/Portals/2/blog/.versions/electron%20beam%20lithography%202_720w.webp?ver=FO9E9AACD-CCTt0uw0bhag%3d%3d 720w,/Portals/2/blog/.versions/electron%20beam%20lithography%202_360w.webp?ver=pMLnrWiTJXRPFJG54Ghqbg%3d%3d 360w" sizes="(min-width:1920px) 30vw,(min-width:1600px) 36vw,(min-width:1366px) 40vw,(min-width:1200px) 46vw,(min-width:768px) 44vw,(min-width:320px) 90vw" class="source"&gt;&lt;source srcset="/Portals/2/blog/.versions/electron%20beam%20lithography%202_800w.JPEG?ver=_fSTeV75wsMl-FyoJw6XOQ%3d%3d 800w,/Portals/2/blog/.versions/electron%20beam%20lithography%202_720w.JPEG?ver=HyaKAFxUyTt8XpJAzwLZLQ%3d%3d 720w,/Portals/2/blog/.versions/electron%20beam%20lithography%202_360w.JPEG?ver=XKHjnxTybo9A_5MiVMlP1A%3d%3d 360w" sizes="(min-width:1920px) 30vw,(min-width:1600px) 36vw,(min-width:1366px) 40vw,(min-width:1200px) 46vw,(min-width:768px) 44vw,(min-width:320px) 90vw" class="source"&gt;&lt;img draggable="true" loading="lazy" src="/Portals/2/blog/electron%20beam%20lithography%202.jpg?ver=fKF_GMOGB-5GySbYq1Bhmg%3d%3d" id="iani8" class="vj-image img-fluid image-link"&gt;&lt;/picture&gt;&lt;/span&gt;&lt;/div&gt;&lt;/div&gt;&lt;div class="col-xl-6 col-md-6 col-sm-6 col-12"&gt;&lt;div id="i4sz" class="vj-text text-dark paragraph-style-1"&gt;The electron beam lithography process involves covering the surface of the substrate with a resist. Certain areas of the sample are then exposed to the incident beam of electrons that allow for the pattern's direct writing into the resist layer.&lt;/div&gt;&lt;div id="i43kw" class="vj-text text-dark paragraph-style-1"&gt;The sample is exposed by the electron beam in very fine steps to create the pattern. At each step, the resist must be exposed for sufficient time for the beam to activate the resist. Determining the optimal time for this in electron beam lithography is one of the steps in the process automation of the technique.&lt;/div&gt;&lt;div id="iazv5" class="vj-text text-dark paragraph-style-1"&gt;Once the resist layer has been exposed, the remaining resist is developed through chemical treatment of the sample, often with solvents such as acetone or alcohols that will dissolve the resist layers. Polymers such as PMMA (positive tone) and HSQ (negative tone) are popular choices for electron beam lithography resists and can be spun in very thin layers on top of the substrate of choice for the electron beam lithography process.&lt;/div&gt;&lt;/div&gt;&lt;/div&gt;&lt;/div&gt;&lt;h3 id="i9ft3" class="vj-heading head-style-1 text-dark"&gt;What is electron beam lithography used for?&lt;/h3&gt;&lt;div class="spacer" id="iai1h"&gt;&lt;/div&gt;&lt;div id="ice2k" class="vj-text text-dark paragraph-style-1"&gt;Nanofabrication is one of the biggest applications for high-resolution direct-write methods like electron beam lithography.&lt;sup&gt;2&lt;/sup&gt; Many technologies, from new metalens structures toquantum computing, rely on techniques such as electron beam lithography to create the complex surface structures that these applications demand. One of the biggest challenges to be overcome with many new nanotechnology developments is reliable fabrication techniques for creating devices, and electron beam lithography is one potential solution for that.&lt;/div&gt;&lt;div id="iqdsj" class="vj-text text-dark paragraph-style-1"&gt;Other applications of electron beam lithography include creating complex structures such as metal-organic frameworks (MOFs) that are now of interest for the miniaturization of solid-state devices.&lt;sup&gt;3&lt;/sup&gt; There are industrial applications using EBL for production of communication devices, due to the beam position’s nanometer-level accuracy and small linewidth capabilities.&lt;/div&gt;&lt;div class="image-box"&gt;&lt;span class="image-frame"&gt;&lt;picture class="picture-box"&gt;&lt;source type="image/webp" srcset="/Portals/2/blog/.versions/electron%20beam%20lithography%203_1281w.webp?ver=MaTdxFq0TFeI7miyf42Lvw%3d%3d 1281w,/Portals/2/blog/.versions/electron%20beam%20lithography%203_1280w.webp?ver=nDlJ2Gdu05_esxF-yMjQHw%3d%3d 1280w,/Portals/2/blog/.versions/electron%20beam%20lithography%203_720w.webp?ver=olba_wEG4RJlWDR0iVXTVw%3d%3d 720w,/Portals/2/blog/.versions/electron%20beam%20lithography%203_360w.webp?ver=Fl755TqyG0CMKSlblnrc5g%3d%3d 360w" sizes="(min-width:1920px) 64vw,(min-width:1600px) 76vw,(min-width:1366px) 90vw,(min-width:1200px) 99vw,(min-width:768px) 99vw,(min-width:320px) 98vw" class="source"&gt;&lt;source srcset="/Portals/2/blog/.versions/electron%20beam%20lithography%203_1281w.JPEG?ver=wc-hak3ymZhjmXVq9mikxQ%3d%3d 1281w,/Portals/2/blog/.versions/electron%20beam%20lithography%203_1280w.JPEG?ver=T7a3L9vU0KSJ-yBE_iZO3w%3d%3d 1280w,/Portals/2/blog/.versions/electron%20beam%20lithography%203_720w.JPEG?ver=V2TD_ea1uSQQeRl6A9PU1Q%3d%3d 720w,/Portals/2/blog/.versions/electron%20beam%20lithography%203_360w.JPEG?ver=XKWdGGmTNPoZzGOFn1HyhA%3d%3d 360w" sizes="(min-width:1920px) 64vw,(min-width:1600px) 76vw,(min-width:1366px) 90vw,(min-width:1200px) 99vw,(min-width:768px) 99vw,(min-width:320px) 98vw" class="source"&gt;&lt;img draggable="true" loading="lazy" src="/Portals/2/blog/electron%20beam%20lithography%203.jpg?ver=aW7uJHZpJ7ZAOY5nid423g%3d%3d" id="ih3me" class="vj-image img-fluid image-link"&gt;&lt;/picture&gt;&lt;/span&gt;&lt;/div&gt;&lt;h3 id="iua2b" class="vj-heading head-style-1 text-dark"&gt;What is the advantage of e-beam lithography over photolithography?&lt;/h3&gt;&lt;div id="ih1po" class="vj-text text-dark paragraph-style-1"&gt;Photolithography involves the use of optical beams. As the diffraction limit of visible light is on the order of hundreds of nanometers, this limits the spatial resolution achievable with photolithography. While electron beam lithography is also diffraction limited, the diffraction limit of the high energy electrons that can be produced in various electron beam lithography experiments is on the order of nanometers or even sub-nanometer.&lt;/div&gt;&lt;div id="ixqrm" class="vj-text text-dark paragraph-style-1"&gt;The improved spatial resolution of electron beam lithography means much more detailed, and complex structures can be created than with photolithography methods, though the latter has the advantage of higher throughput.&lt;/div&gt;&lt;h2 id="imfrj" class="vj-heading head-style-1 text-dark"&gt;JEOL Solutions&lt;/h2&gt;&lt;div id="iat4u" class="vj-text text-dark paragraph-style-1"&gt;JEOL are world leaders in electron beam technologies and has a number of products available to support &lt;a href="/PRODUCTS/Photomask-Direct-Write-Lithography/Electron-Beam-Lithography" id="imnxr" class="link"&gt;electron beam lithography&lt;/a&gt; processes. Contact JEOL today to see how your direct-write processes could benefit from JEOL’s expertise in the development and optimization of electron beam lithography experiments.&lt;/div&gt;&lt;h3 id="iymvi" class="vj-heading head-style-1 text-dark"&gt;References&lt;/h3&gt;&lt;div class="list-box"&gt;&lt;ol start="1" id="is3gx" class="list ordered-list text-dark"&gt;&lt;li id="im6ng" class="list-item"&gt;&lt;span class="list-text"&gt;Nagashima, K., Zheng, J., Parmiter, D., &amp; Patri, A. K. (2011). Biological Tissue and Cell Culture Specimen Preparation for TEM Nanoparticle Characterization. In S. E. McNeil (Ed.), Characterization of Nanoparticles Intended for Drug Delivery (pp. 83–91). Humana Press. &lt;a href="https://doi.org/10.1007/978-1-60327-198-1_8" id="i1vbj" class="link"&gt;https://doi.org/10.1007/978-1-60327-198-1_8&lt;/a&gt;&lt;/span&gt;&lt;/li&gt;&lt;li id="ildc5" class="list-item"&gt;&lt;span class="list-text"&gt;Chen, Y. (2015). Nanofabrication by electron beam lithography and its applications : A review. Microelectronic Engineering, 135, 57–72. &lt;a href="https://doi.org/10.1016/j.mee.2015.02.042" id="inqpi" class="link"&gt;https://doi.org/10.1016/j.mee.2015.02.042&lt;/a&gt;&lt;/span&gt;&lt;/li&gt;&lt;li id="ip83h" class="list-item"&gt;&lt;span class="list-text"&gt;Tu, M., Xia, B., Kravchenko, D. E., Tietze, M. L., Cruz, A. J., Stassen, I., Hauffman, T., Teyssandier, J., Feyter, S. De, Wang, Z., Fischer, R. A., Marmiroli, B., Amenitsch, H., Torvisco, A., Velásquez-hernández, M. D. J., Falcaro, P., &amp; Ameloot, R. (2021). Direct X-ray and electron-beam lithography of halogenated zeolitic imidazolate frameworks. Nature Materials, 20, &lt;a href="https://doi.org/10.1038/s41563-020-00827-x" id="ipyzi" class="link"&gt;https://doi.org/10.1038/s41563-020-00827-x&lt;/a&gt;&lt;/span&gt;&lt;/li&gt;&lt;li id="irx9q" class="list-item"&gt;&lt;span class="list-text"&gt;Smith, D. J. (2008). Ultimate resolution in the electron microscope? Materials Today, 11, 30–38. &lt;a href="https://doi.org/10.1016/S1369-7021(09)70005-7" id="i18xh" class="link"&gt;https://doi.org/10.1016/S1369-7021(09)70005-7&lt;/a&gt;&lt;/span&gt;&lt;/li&gt;&lt;li id="iocdk" class="list-item"&gt;&lt;span class="list-text"&gt;JEOL (2022) Scanning Electron Microscopes, &lt;a href="/PRODUCTS/Scanning-Electron-Microscopes-SEM" id="ii84c" class="link"&gt;https://www.jeolusa.com/PRODUCTS/Scanning-Electron-Microscopes-SEM&lt;/a&gt;, accessed April 2022&lt;/span&gt;&lt;/li&gt;&lt;li id="ifqum" class="list-item"&gt;&lt;span class="list-text"&gt;Arenal, F. L., A., D., &amp; R., M. (2015). Advanced transmission electron microscopy. Springer&lt;/span&gt;&lt;/li&gt;&lt;/ol&gt;&lt;/div&gt;</description><guid isPermaLink="false">46</guid></item></channel></rss>