Join Us At Microscopy & Microanalysis 2026

AUGUST 2-6, 2026 | BAIRD CENTER, MILWAUKEE, WI

Find JEOL at Booth #504.

Visit JEOL at Booth #504 for a full week of live instrument demonstrations, technical presentations, and one-on-one time with our team.
ON THE AGENDA
Live Instrument Demos
See JEOL systems run live on the show floor throughout the week.
Lunch & Learn
Midday sessions on the techniques and applications you can put to use.
After-Hours Sessions
Talks and conversation to close out each day after show hours.
Technical Presentations
JEOL specialists and guest speakers across electron and ion optics.
UHR Field Emission SEM

JSM-IT810

JSM-IT810
Ultrahigh resolution FE SEM with the most advanced high-resolution analytical technology available today.
Field Emission SEM

JSM-IT710HR

JSM-IT710HR
High resolution, large chamber FE SEM. Compact, versatile Field Emission SEM that offers Smart-Flexible-Powerful performance at a great value.
120kV TEM

JEM-120i

JEM-120i
Imaging and cryomicroscopy excellence in a compact and easy to use 120kV TEM.
Benchtop SEM

New NeoScope™

JSM-IT710HR
Incorporates advanced technology and functions that make it simple for users at any skill level to obtain outstanding SEM images and elemental analysis results in minutes.
TEM

JEOL-IDES Products

JEOL-IDES Products
Add time resolution to the TEM's exceptional spatial resolution enabling new applications and the exploration of the dynamics of specimens across a range of very fast time scales.

Hear from leaders in the field about the latest advancements in microscopy from JEOL. 

High-throughput electron diffraction workflows with the XtaLAB Synergy-ED

Jessica E. Burch, Rigaku | Tuesday, August 4 | 12:00 PM - 1:00 PM
Microcrystal electron diffraction has been established as a cutting-edge technique for the structural elucidation of diverse nanocrystalline materials. With thousands of crystallites available on a grid, electron diffraction analysis routinely enables the identification of multiple compounds, crystalline phases, or trace contaminants within a single sample; however, fully automated workflows are critical for its practical implementation in the analysis of complex samples. Herein, we discuss our latest developments in high-throughput data collection and analysis using the XtaLAB Synergy-ED electron diffractometer, developed jointly by JEOL Ltd. and Rigaku Corporation. These developments include AI-driven grain selection and automated energy-dispersive X-ray spectroscopy measurements, seamlessly integrated into CrysAlisPro-ED to improve efficiency and ease of use. Representative examples will be presented to demonstrate these capabilities.

Automated workflows for FIB, S/TEM Imaging and Analytical Analysis of Advanced Semiconductor Devices

Noureddine Anibou, JEOL USA | Wednesday, August 5 | 12:00 PM - 1:00 PM
As semiconductor devices continue to scale, with greater inherent complexity, beyond the 3nm node, the need for high throughput FIB sample prep for atomic resolution TEM/STEM imaging and analysis has increased dramatically. This ramp up is driving vendors to provide automated workflows that reduce the time and skill necessary to handle this dramatic increase. Every step of the process, from FIB sample preparation to atomic resolution TEM/STEM imaging and analytical results for metrology and defect characterization for Yield enhancement and production support has never been more critical.
This session will showcase JEOL's integrated workflow, highlighting the JIB-PS500i FIB-SEM & JEM-ACE200 200kV FE Cs corrected high speed analytical S/TEM. The JIB-PS500i utilizes a high-speed preparation technique called STEMPLING for automated lamella preparation and when combined with the JEM-ACE200, for automated lamella analysis (Automation Center SW), FABs gain increased throughput with a streamlined, reproducible solution for semiconductor failure analysis and process characterization. Attendees will learn how automation minimizes operator variability, enables unattended multi-site specimen preparation, simplifies instrument-to-instrument transfer, and accelerates high-throughput S/TEM imaging and analysis.
The presentation will highlight how an end-to-end automated workflow improves productivity, consistency, and overall laboratory efficiency while allowing scientists to focus on data interpretation rather than repetitive microscope operations.

JEOL Mono-MARS at UIC: Accessing Unexplored Experimental Regimes Defined by Energy, Spatial Resolution, and Magnetic-Field Conditions

Robert Klie, University of Chicago Illinois | Monday, August 3 | 5:45 PM - 6:45 PM

Introducing LazEdge: A New Approach to In-Situ Laser Processing in the SEM

Donna Gosselin​, JEOL USA | Tuesday, August 4 | 5:45 PM - 6:45 PM
Join JEOL USA for an introduction to LazEdge, an integrated laser processing and SEM system designed for rapid cross-sectioning and analysis over large areas. Using a proprietary optical system, LazEdge produces cross sections with minimal laser-induced periodic surface structures (LIPSS), enabling direct SEM observation and EBSD-quality analysis. The integrated workflow allows users to quickly alternate between laser processing and SEM characterization, improving efficiency and throughput. This presentation will provide an overview of the underlying technology and highlight applications in metallurgy, battery, and other materials characterization workflows.

The New CryoARM 300S: Innovations for High-Performance Cryo-Electron Microscopy

 John Grimes, JEOL USA & Irina El Khoury​, JEOL USA | Wednesday, August 5 | 5:45 PM - 6:45 PM
The new CryoARM 300S advances the CryoARM platform with new configurations and technologies for single-particle analysis and cryo-electron tomography, as well as enhanced operating-system capabilities and automation. Key innovations include a high-precision tilting goniometer and an optional high-contrast lens, delivering exceptional resolution and contrast.

The Evolution of Live SEM Analysis—In the form of a Benchtop

Damian Beasock, JEOL USA | Tuesday, August 4 | 3:00 PM
Discover how the latest advancements in benchtop SEM technology are changing expectations for imaging and analysis workflows. This live demonstration will showcase powerful real-time analytical capabilities, interactive data collection with real-time data display, and innovative new approaches to sample characterization, highlighting how meaningful microscopy results can be obtained faster and more intuitively than ever before. Join us for a first look at what's next in benchtop SEM analysis.

Taking the Newest JEOL TEM, the JEM-120i, for a Spin

Jaap Brink, JEOL USA | Wednesday, August 5 | 3:00 PM

Integrating the JEOL EDS and EDAX EDSD for Simultaneous Elemental and Structural Characterization

Dave Edwards, JEOL USA and René de Kloe, Gatan | Wednesday, August 5 | 3:00 PM
Discover the power of a fully integrated analytical workflow. Join us to learn how JEOL EDS systems seamlessly integrate with EDAX EBSD detectors, creating a unified platform for simultaneous compositional and crystallographic analysis. See how this solution simplifies workflows, improves efficiency, and delivers deeper insights into your materials.

Systematic assessment of quantitative EDS: reproducibility, standardization, limitations and best practices

Kayleigh Harvey, David Edwards, Peter McSwiggen | Monday, August 3 | 2:00 PM - 2:15 PM | Location: S202 A

Crystal Orientation Estimation Using Discrete Fourier Transform Analysis of Backscattered Electron Azimuthal Distributions

Takeshi Otsuka, Seiichi Takami | Monday, August 3 | 2:15 PM - 2:30 PM | Location: S102 B

Development of the 300 kV Magnetic Field-Free Atomic Resolution Electron Microscope

Yuji Kohno, Tatsuhiro Maekawa, Shigeyuki Morishita, Hidetaka Sawada, Isamu Ishikawa, Naoya Shibata | Tuesday, August 4 | 8:45 AM - 9:15 AM | Location: S202 D

Developments of a Large-Convergence-Angle Scanning Transmission Electron Microscope Operable Over a Wide Range of Accelerating Voltages

Gen Koinuma, Stephan Uhleman, Yu Jimbo, Svenja Perl, Thomas Riedel, Yuki Ninota, Philipp Wachsmuth, Naoya Chihara | Tuesday, August 4 | 9:30 AM - 9:45 AM | Location: S202 D

Peak Shifts and Intensity Changes Due to Structural Changes in the Magnesium and Carbon Systems

Peter McSwiggen | Tuesday, August 4 | 9:30 AM - 9:45 AM| Location: S202 A

Critical Dimension Measurement of ONON Layer Thickness Using OBF STEM: Low‑Dose, High‑Contrast Imaging

Kevin Mcilwrath, Masayasu Yoneda, Masahide Shima, Kyoichiro Asayama, Shuji Kawai, Yuhiro Segawa, Kazuya Yamazaki | Tuesday, August 4 | 11:30 AM - 12:00 PM | Location: S102 E

Development and Applications of a High-Speed Spectrum Imaging Method in Auger Electron Spectroscopy

Fuyuki Nabeshima, Kenichi Tsutsumi, Konomi Ikita, Tatsuya Uchida, Noboru Taguchi, Kazushiro Yokouchi, Akihiro Tanaka, Toshiyuki Ohama | Monday, August 3 | 3:00 PM - 5:30 PM | POSTER #14 in the Exhibit Hall

Evaluation of Crystal Rotation around Cracks in SiGe/Ge/ Si(111) Using NBD Diffraction Disks and STEM Moiré

Junji Yamanaka, Azusa Baba, Maro Murata, Chiaya Yamamoto, Kentarou Sawano, Keisuke Arimoto | Tuesday, August 3 | 3:00 PM - 5:30 PM | POSTER #86 in the Exhibit Hall

Noureddine Anibou

JEOL USA

Robert Klie

University of Illinois Chicago

John Grimes

JEOL USA

Irina El Khoury

JEOL USA

Damian Beasock

JEOL USA

Jacob "Jaap" Brink

JEOL USA

Kayleigh Harvey

JEOL USA

Dave Edwards

JEOL USA

Yuji Kohno

JEOL Ltd.

Gen Koinuma

JEOL Ltd.

Yasuaki Yamamoto

JEOL Ltd.

Fuyuki Nabeshima

JEOL Ltd.

Souhei Motoki

JEOL Ltd.

Takeshi Otsuka

JEOL Ltd.

Jessica Burch

Rigaku

Peter McSwiggen, Ph.D

McSwiggen Associates / JEOL USA

Donna Gosselin

JEOL USA

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