JAMP-9510F Field Emission Auger Microprobe

JAMP-9510F Field Emission Auger Microprobe

The JAMP-9510F Field Emission Auger Microprobe offers the highest spatial resolution available in an Auger microprobe: (min. probe diameter of 3nm SEI; 8nm for Auger analysis). Employing a low-aberration condenser lens (in which an electrostatic field and a magnetic field are superposed), combined with a patented "in-lens' Schottky field emission gun, the JAMP-9510F obtains very small spot sizes with beam currents up to 200nA.

The electron spectrometer is an electrostatic hemispherical analyzer (HSA) with a multi-channel detector, and was optimally designed for Auger analysis. It provides user-selectable energy resolution for high throughput high resolution and high sensitivity.

With the JAMP-9510F, high resolution SEM imaging is possible as well as Auger image analysis and line profile analysis. Also, depth profile analysis can be performed during ion etching.

The JAMP-9510F features a high performance ion gun for high speed sputtering and for low energy charge neutralization. User-friendly and easily operated, the JAMP-9510F also offers the flexibility of optional analysis functions such as EDS.

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Key Features

  • 3nm SEI resolution
  • 8nm probe diameter for Auger analysis
  • Variable energy resolution from 0.05% to 0.6%
  • Chemical state analysis in several 10nm areas
  • Neutralizing gun allows Auger analysis of insulating materials
  • Large specimen stage - samples up to 95mm in diameter


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  • A. Tanaka, K. Tsutsumi, H. Onodera, and T. Tazawa, “Quantitative Oxidation State Analysis of Transition Metals in a Lithium-ion Battery with High Energy Resolution AES,” Microscopy and Microanalysis, vol. 20, no. Supplement S3, pp. 488–489, Aug. 2014.
  • J. Liday, P. Vogrinčič, V. Vretenár, M. Kotlár, M. Marton, and V. Řeháček, “Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN,” Journal of Electrical Engineering, vol. 66, no. 6, pp. 344–347, 2015.
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  • Š. Chromik, M. Sojková, V. Vretenár, A. Rosová, E. Dobročka, and M. Hulman, “Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition,” Applied Surface Science.

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