EDM Basic (Electrostatic Dose Modulator)

EDM Basic (Electrostatic Dose Modulator)
The Electrostatic Dose Modulator (EDM) is a fast beam blanking system with a pre-sample electrostatic deflector, including electronics and software control. With EDM, the beam can switch on or off in less than 50 ns. This 100,000x improvement in blanking speed immediately improves the clarity of data taken at fast exposure times. EDM can also attenuate electron illumination without affecting imaging conditions, giving TEM and STEM users exceptional control over the dose on their samples. Cutting-edge electronics and software add-ons unlock advanced applications such as temporal dose structuring and STEM synchronization.

Features

  • Lightning-fast speeds:
    EDM systems achieve switching times faster than 50 ns.
  • Independent intensity adjustment:
    By rapidly turning the beam on and off with variable pulse widths, the EDM makes it easy to adjust the average beam intensity without changing the image conditions. A desktop accessory knob provides an intuitive interface to adjust the dose attenuation factor.
  • Dose structuring:
    Users can take control of their illumination by applying dose in pulses with variable durations as short as 100 ns and frequencies up to 1 MHz.
  • Modern control software:
    The EDM works out of the box as a fast beam blanker. Control software is included for programmable dose attenuation, logging, and more.
  • Integration:
    The EDM act as a fast reliable pre-sample beam blanker while supporting a companion Relativity Sub-Framing System as well as third-party hardware.

Pulsed beam TEM illumination

Pulsed beam TEM illumination

Pulsed beam STEM Illumination

Pulsed beam STEM Illumination
Dose attenuation by pulsed illumination with Frequency of 500 kHz (2 μs) in a high resolution STEM at 300 kV using Si[110] in the condition of pixel dwell time with 19 μs/pixel (1,024 x 1,024 pixels), by changing duration ration from 90% to 50% during acquisition of one STEM image in 20 s.

Specifications

Fast beam blanking

Quantity Value
Maximum pulse frequency 500 kHz
Transition time 90%-10% < 20 ns
Blanking signals 3 inputs

Dose attenuation

Configuration EDM Basic
Application TEM and STEM imaging
Pulse repetition frequency (max) 500 kHz
Pulse width increment 62.5 ns
Minimum pulse width 125 ns

EDM option

EDS True Area Scan EDM Programmable Scan with EDM Synchrony

Applicable models:

 JEM-ARM300F2, JEM-ARM200F (CFEG), NEOARM (CFEG), JEM-F200 (CFEG), JEM-2200FS*, JEM-2100F*, JEM-3300, JEM-Z200FSC, JEM-Z200CA
(* These models should be equipped with a standard column without the Cs corrector.)

Gallery

Time-resolved DPC imaging with EDM

Time-resolved DPC imaging with EDM

The Electrostatic Dose Modulator (EDM) makes stroboscopic measurements simple for TEM and STEM. In this application note, pulsed illumination boosts the time resolution of Differential Phase Contrast (DPC) imaging using the already-fast SAAF Quad segmented detector1. The sample2 is mounted on a chip in a biasing sample holder from Hummingbird Scientific. During each STEM pixel, a waveform generator ramps the bias voltage between -5 V and +5 V. After a variable delay time, a logic-level pulse to the input of the fast electrostatic shutter turns the probe beam on for 2 μs. Data collection can be automated.

By varying the delay time of the exposure pulse, the sample is measured at different times during the bias waveform. A complete STEM image is recorded for each delay time (shown as dots in the timing diagram to the left). Even though each STEM image takes more than 10 seconds to record, the time resolution of the measurement is set by the 2 μs exposure pulse. The sample excitation can be accomplished using in-situ holders, IDES Luminary™ Micro, or other systems that produce repeatable dynamics in a sample.
Time-resolved DPC imaging with EDM
Selected images from a tr-DPC measurement of a SiC MOS capacitor. The field in the sample is observed by the deflection of the beam at each probe position. The intensity in the top row of images shows the magnitude of this deflection, and color indicates the direction. The divergence of these indicates the charge density and is automatically calculated by the acquisition software (bottom row of images). The field is concentrated at the oxide interface between SiC (left) and Al (right). At t = 15 μs, the bias crosses zero volts and the field changes polarity.
1. Measurement conditions: Instrument JEM-F200, accelerating voltage 200 kV, STEM Lorenz mode, dwell time 50 microseconds, number of pixels 512 × 512. Experiment setup diagram is simplified. For detailed configuration information, consult your local JEOL sales office.

2. The sample is a MOS capacitor fabricated from Al, SiO2, and n-type SiC, 200 nm thick, provided by Fuji Electric Co. Ltd.

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