8-Wavelength DBR Laser Array Fabricated with a Single-Step Bragg Grating Printing Technique October 22, 2020 Electron Beam Lithography, Photomask / Direct Write Lithography 0 An 8-wavelength DBR array for narrow channel wavelength division multiplexing (WDM) has been fabricated with a new technique for printing first-order Bragg gratings using a phase mask and a conventional incoherent source. For full details: Attached files often contain the full content of the item you are viewing. Be sure and view any attachments. resources_se/Optical-15.2.pdf 347.02 KB Related Articles Advances in near field holographic grating mask technology We report progress on several practical issues of near field holographic (NFH) printing for optoelectronic applications. In particular, we report on the following: adaptation of the mask making process to large area holographically generated grating masks; evaluation of a commercially available UV contact aligner modified to allow routine NFH printing; use of mask copies to avoid excessive wear on original masks; options for reducing the writing time for e-beam generated grating masks; and the application of e-beam generated grating masks to a DFB six-laser array with 200-GHz frequency channel separation. Fabrication of Grating Patterns by E-beam Lithography Along with the development of optical communication, optical integrated devices are now making rapid progress, and especially the grating, which is of a periodic structure, is now playing an important role in a wide variety of fields. In recent years, there is an increasing need for smaller grating pitches, and not only semiconductors bit also a variety of materials are used for substrates. Recently, we have established a technique to finely control the grating pitch to 1nm, less than the pattern data unit (5 nm), by E-beam (E-B) lithography. Also, the fabrication of gratings with phase shift has been simplified by changing the stage shift distance. Cu Single Damascene Interconnects with Plasma-polymerized Organic Polymers (k=2.6) for High-speed, 0.1µm CMOS devices For high-speed CMOS devices, triple-layered Cu single damascene interconnects (SDI) with Cu-via plugs are fabricated in hybrid dielectric films of plasma-polymerized divinylsiloxan benzocyclobuten film (p-BCB: k=2.6) and p-CVD SiO2. No degradation of 0.1µm MOSFETs is observed after the full interconnect integration through MOCVD-Cu filling and pad-scanning, local-CMP for Cu polish. The stacked Cu-pads in the high modulus p-BCB film (19Gpa) withstand sever mechanical impact during Al wire bonding. The 0.08µm CMOS transmitter, which consists of 32:8 pre-multiplexer (MUX), 8B10B encoder, 10:1 MUX and DATA driver, is obtained successfully to generate high-speed serial signals up to 6Gb/s. This fabrication process is a key to obtain the high speed CMOS devices with low-k/Cu interconnects. Nanobeam process system: An ultrahigh vacuum electron beam lithography system with 3 nm probe size We have constructed a "nanobeam process system" which is applicable to high resolution electron beam lithography using inorganic resists and is also compatible with electron beam induced surface reaction. It is a 50 kV electron beam lithography system with a gas introducible ultrahigh vacuum sample chamber using a double chamber stage system which isolates stage mechanisms from the sample chamber. The probe size measured with a knife edge method was 2.8 nm, where the probe current was 127 pA. The base pressure of the sample chamber was 3.5X10-7 Pa after baking. The pressure of the gun chamber did not vary at all and the pressure rise of the mechanism chamber was 3X10-6 Pa when the pressure of the sample chamber increased to 1X10-3 Pa during N2 gas introduction. Standard deviations of stitching and overlay accuracy were 14 and 18 nm, respectively. Line patterns with a width of about 5 nm and a pitch of 15 nm were delineated in SiO2 when used as a high resolution resist. Gate technology for 70 nm metal–oxide–semiconductor field-effect transistors with ultrathin (<2 nm) oxides Results are described for a gate level technology module developed to produce metal–oxide–semiconductor transistors with physical gate lengths of 70 nm and below. Lithography is performed by direct write e-beam lithography (EBL) using a thermal field-emission EBL system in SAL 601 resist. Critical dimension (CD) control, as measured by several methods, is found to depend not only on dose control but also on writing parameters such as pixel spacing. The pattern transfer using a silicon dioxide hard mask is shown to exhibit a trade-off between anisotropy and selectivity. Transmission electron microscopy cross sections reveal that two atomic layers are removed even when the gate oxide stopping layer is completely intact. We report results for gate lengths down to 60 nm with edge roughness on the order of 5 nm, within the acceptable limits for threshold requirements, while stopping the etch process on oxides as thin as 1.2 nm. Fabrication of Nano-Structures using EB-Lithography and its Application to Long-Wavelength Quantum-Wire Lasers It is important to fabricate high density and high uniformity nano-structures for the realization of quantum wire lasers. In this work, 1.5µm-wavelength GaInAsP/InP quantum wire lasers were fabricated by electron beam (EB) lithography, and wet chemical etching followed by embedding organic metal vapor phase epitaxy (OMVPE) growth. Showing 0 Comment Comments are closed.