Photomask / Direct Write Lithography Documents

Related Articles

• Si-Based Photonic Crystals and Photonic-Bandgap Waveguides

  We studied various types of 2D and 3D Si-based photonic crystal structures that are promising for future photonic integrated circuit application. With regard to 2D SOI photonic crystal slabs, we confirmed the formation of a wide photonic bandgap at optical communication wavelengths, and used structural tuning to realize efficient single-mode line-defect waveguides operating within the bandgap. As regards 3D photonic crystals, we used a combination of lithography and the autocloning deposition method to realize complicated 3D structures. We used this strategy to fabricate 3D full-gap photonic crystals and 3D/2D hybrid photonic crystals.
• Confined Band Gap in an Air-Bridge Type of Two-Dimensional AlGaAs Photonic Crystal

  The transmittance spectrum for an air-bridge type of AlGaAs photonic crystal (PC) slabs successfully fabricated was measured. It is found that the observed spectrum is consistent with both the theoretical band structure and the calculated one. Moreover, the transmittance due to the modes below the light line is found to be almost 100%, indicating that the guided modes should exist.
• Topology optimization and fabrication of photonic crystal structures

  Topology optimization is used to design a planar photonic crystal waveguide component resulting in significantly enhanced functionality. Exceptional transmission through a photonic crystal waveguide Z-bend is obtained using this inverse design strategy. The design has been realized in a silicon-on-insulator based photonic crystal waveguide. A large low loss bandwidth of more than 200 nm for the TE polarization is experimentally confirmed.
• Broadband highly efficient dielectric metadevices for polarization control

  Metadevices based on dielectric nanostructured surfaces with both electric and magnetic Mie-type resonances have resulted in the best efficiency to date for functional flat optics with only one disadvantage: a narrow operational bandwidth. Here we experimentally demonstrate broadband transparent all-dielectric metasurfaces for highly efficient polarization manipulation. We utilize the generalized Huygens principle, with a superposition of the scattering contributions from several electric and magnetic multipolar modes of the constituent meta-atoms, to achieve destructive interference in reflection over a large spectral bandwidth. By employing this novel concept, we demonstrate reflectionless (∼90% transmission) half-wave plates, quarter-wave plates, and vector beam q-plates that can operate across multiple telecom bands with ∼99% polarization conversion efficiency.
• 25 nm pitch GaInAs/InP buried structure: Improvement by calixarene as an electron beam resist and tertiarybutylphosphine as a P source in organometallic vapor phase epitaxy regrowth

  To achieve a fine periodic semiconductor structure by electron beam (EB) lithography, calixarene was used as an EB resist. A 25 nm pitch InP pattern was formed successfully and 40 nm pitch InP structures were achieved with good reproducibility. A shorter developing time, precise stage motion, accurate control of the widths of lines and spaces, and slight O2 ashing were important to obtain a fine InP pattern by a two-step wet chemical etching process. Furthermore, the fabricated periodic InP pattern was buried in a GaInAs structure by organometallic vapor phase epitaxy. The introduction of tertiarybutylphosphine as the phosphorous source prevented the fine structure from deforming when the temperature was raised and a 25 nm pitch periodic structure was buried successfully.
• Lithography for sub-60 nm resist nanostructures

  As the semiconductor community continues to follow the Semiconductor Industry Association Roadmap, resist structures are being printed further into the nanometer domain. However, a persistent issue for successful sub-60 nm resist patterning is mechanical stability at high aspect ratios. The objective of this article is to understand what processing conditions facilitate processing resist nanostructures with useful aspect ratios for the fabrication of sub-60 nm transistors. We have found that, in aqueous based development and rinse, if the resist thickness is reduced, then the aspect ratio is sacrificed for the sake of resolution. The implication is that there is a resolution limit at which resist structures will have aspect ratios that are useful for device fabrication. We have also found that there are development effects that occur in the thick film regime that are not reproducible with thin films. The best resolution structures we have been able to print are lines of 28 nm in width using direct write electron-beam lithography on negative chemically amplified resists NEB-22 and NEB-31 (Sumitomo Chemical Inc.) with an aspect ratio of about 3. To put this result in perspective, this is about 40 molecules wide.