Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection October 22, 2020 Electron Beam Lithography, Photomask / Direct Write Lithography 0 We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection. For full details: Attached files often contain the full content of the item you are viewing. Be sure and view any attachments. resources_se/Optical-11.pdf 396.51 KB Related Articles Cu Single Damascene Interconnects with Plasma-polymerized Organic Polymers (k=2.6) for High-speed, 0.1µm CMOS devices For high-speed CMOS devices, triple-layered Cu single damascene interconnects (SDI) with Cu-via plugs are fabricated in hybrid dielectric films of plasma-polymerized divinylsiloxan benzocyclobuten film (p-BCB: k=2.6) and p-CVD SiO2. No degradation of 0.1µm MOSFETs is observed after the full interconnect integration through MOCVD-Cu filling and pad-scanning, local-CMP for Cu polish. The stacked Cu-pads in the high modulus p-BCB film (19Gpa) withstand sever mechanical impact during Al wire bonding. The 0.08µm CMOS transmitter, which consists of 32:8 pre-multiplexer (MUX), 8B10B encoder, 10:1 MUX and DATA driver, is obtained successfully to generate high-speed serial signals up to 6Gb/s. This fabrication process is a key to obtain the high speed CMOS devices with low-k/Cu interconnects. Nanobeam process system: An ultrahigh vacuum electron beam lithography system with 3 nm probe size We have constructed a "nanobeam process system" which is applicable to high resolution electron beam lithography using inorganic resists and is also compatible with electron beam induced surface reaction. It is a 50 kV electron beam lithography system with a gas introducible ultrahigh vacuum sample chamber using a double chamber stage system which isolates stage mechanisms from the sample chamber. The probe size measured with a knife edge method was 2.8 nm, where the probe current was 127 pA. The base pressure of the sample chamber was 3.5X10-7 Pa after baking. The pressure of the gun chamber did not vary at all and the pressure rise of the mechanism chamber was 3X10-6 Pa when the pressure of the sample chamber increased to 1X10-3 Pa during N2 gas introduction. Standard deviations of stitching and overlay accuracy were 14 and 18 nm, respectively. Line patterns with a width of about 5 nm and a pitch of 15 nm were delineated in SiO2 when used as a high resolution resist. High-purity, ultrahigh-resolution calixarene electron-beam negative resist Calixarene is a promising high-resolution negative electron-beam resist having a resolution of the order of 10 nm because of its low molecular weight. We have made a purified calixarene resist containing metal contaminants whose concentrations are measured in parts per billion and which therefore do not degrade the performance of silicon-based electron devices. The purity of the calixarene itself was also improved and we obtained high-purity calixarene and high-purity calixarene, both of which contain the main component, which is more than 95% of all the calixarene present. The resolution of both purified calixarene resists is almost the same as that of the unpurified calixarene, but the sensitivity of calixarene is higher than that of calixarene because its molecular weight is higher. Nanofabrication of subwavelength, binary, high-efficiency diffractive optical elements in GaAs A single-etch-step process for the fabrication of high-efficiency diffractive optical elements is presented. The technique uses subwavelength surface relief structures to create a material with an effective index of refraction determined by the fill factor of the binary pattern. Fabrication is performed using electron beam lithography and reactive-ion-beam etching on bulk GaAs, but the process is applicable to any material for which well-controlled etches exist. In this work, we designed and fabricated a blazed transmission grating for operation at 975 nm. The blazed grating exhibits a diffraction efficiency into the first order of 85% of the transmitted power, Novel high-yield trilayer resist process for 0.1 µm T-gate fabrication By utilizing a novel ZEP/PMGI/ZEP trilayer resist process, GaInAs/AlInAs T-gate modulation-doped field effect transistors on InP with 0.1 µm gate lengths have been demonstrated. The trilayer resist requires only a single exposure. An overhang structure for liftoff, with a 0.1 µm footprint, is created by a sequence of infinitely selective developments for each layer. Linewidths as narrow as 65 nm have been obtained. Application of X-ray Mask Fabrication Technologies to High Resolution, Large Diameter Ta Fresnel Zone Plates The resolution of Fresnel zone plate (FZP) as X-ray lens is determined by the width of outer-most zone, and the diameter of condenser lens is desirable to be large so that bright x-ray beam is available in x-ray optical systems. As the diameter of FZPs with nm resolution reported so far is small, typically less than 0.2mm, FZPs cannot be used as effective condenser lens. Showing 0 Comment Comments are closed.