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Nanobeam process system: An ultrahigh vacuum electron beam lithography system with 3 nm probe size

We have constructed a "nanobeam process system" which is applicable to high resolution electron beam lithography using inorganic resists and is also compatible with electron beam induced surface reaction. It is a 50 kV electron beam lithography system with a gas introducible ultrahigh vacuum sample chamber using a double chamber stage system which isolates stage mechanisms from the sample chamber. The probe size measured with a knife edge method was 2.8 nm, where the probe current was 127 pA. The base pressure of the sample chamber was 3.5X10-7 Pa after baking. The pressure of the gun chamber did not vary at all and the pressure rise of the mechanism chamber was 3X10-6 Pa when the pressure of the sample chamber increased to 1X10-3 Pa during N2 gas introduction. Standard deviations of stitching and overlay accuracy were 14 and 18 nm, respectively. Line patterns with a width of about 5 nm and a pitch of 15 nm were delineated in SiO2 when used as a high resolution resist.

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