Preparation of Diamond Mold using Electron Beam Lithography for Application to Nanoimprint Lithography October 22, 2020 Electron Beam Lithography, Photomask / Direct Write Lithography 0 Diamond molds were fabricated by two types of fabrication processes, both of which use a conductive intermediate layer between the diamond surface and polymethylmethacrylate (PMMA) resist to prevent surface charge-up. For full details: Attached files often contain the full content of the item you are viewing. Be sure and view any attachments. resources_se/Optical-3.pdf 350.59 KB Related Articles Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System To increase the throughput of electron beam lithography used to fabricate sub- 100-nm patterns, we developed an electron beam and deep UV intra-level mix-and-match lithography process, that uses the JBX-9300FS point-electron-beam system and a conventional KrF stepper. Pattern data preparation was improved for sub- 100-nm patterns. To reduce the effect of line width variation caused by post-exposure delay on complementary metal-oxide-semiconductor (CMOS) devices, we first exposed KrF patterns and then added another post-exposure bake before the electron beam (EB) exposure. We have used this technique to expose the gate layer of sub- 100-nm CMOS devices. When we set the threshold size between EB and KrF patterns at 0.16 µm, the throughput of electron beam lithography was about threefold that of the full exposure by the electron beam lithography process. Sub-50-nm CMOS devices with high drive current were successfully fabricated. High-Resolution Electron-Beam Lithography and Its Application to MOS Devices A point electron-beam lithography system using a thermal field emitter (TFE) allows us to use a nanometer-level fine electron beam to investigate nano-fabrication techniques and minute devices. We developed an organic negative resist, called calixarene, which has low molecular weight of 972 and almost monodispersity. This resist shows a high resolution of about 10 nm when it is exposed to an electron-beam system of 50 kV using TFE. The newly developed resist has been applied in order to fabricate an EJ-MOSFET (electrically variable shallow junction metal-oxide-semiconductor field effect transistor). A 14-nm-gate-length EJ-MOSFET was fabricated by using a calixarene resist and an electron-beam exposure system, and showed MOS device performance. Nanobeam process system: An ultrahigh vacuum electron beam lithography system with 3 nm probe size We have constructed a "nanobeam process system" which is applicable to high resolution electron beam lithography using inorganic resists and is also compatible with electron beam induced surface reaction. It is a 50 kV electron beam lithography system with a gas introducible ultrahigh vacuum sample chamber using a double chamber stage system which isolates stage mechanisms from the sample chamber. The probe size measured with a knife edge method was 2.8 nm, where the probe current was 127 pA. The base pressure of the sample chamber was 3.5X10-7 Pa after baking. The pressure of the gun chamber did not vary at all and the pressure rise of the mechanism chamber was 3X10-6 Pa when the pressure of the sample chamber increased to 1X10-3 Pa during N2 gas introduction. Standard deviations of stitching and overlay accuracy were 14 and 18 nm, respectively. Line patterns with a width of about 5 nm and a pitch of 15 nm were delineated in SiO2 when used as a high resolution resist. Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System A high energy 50-kV electron beam direct writing system which has a gas introduction line has been developed. Several aspects of the performance of this system are demonstrated. The electron beam size has been improved to be less than 5 nm. 10-nm width line patterns with 50-nm periods in PMMA resist on a thick Si substrate are demonstrated. It is observed that fewer proximity effects occur when a high-energy electron beam is used. 20-nm-width lines and 20-nm-diameter Au•Pd metal patterns have been fabricated by a lift-off method. 14-nm-diameter carbon dot patterns were deposited on a Si substrate by electron-beam-induced deposition using Styrene gas. Lithographic Performance and Mix-and-Match Lithography using 100 kV Electron Beam System JBX-9300FS We evaluated the performance of 100-kV point electron-beam lithography system: JBX-9300FS and developed Mix-and-Match lithography process. Resolution on resist exposure is 30-nm using commercially available chemically amplified resist and is down to 10-nm-order using Calixarene resist. For high-throughput lithography, Mix-and-Match lithography process was developed including pattern preparation, and EB exposure time decreased to 1/3. These process technologies are useful for development of advanced CMOS devices. Lithographic Performance and Mix-and-Match Lithography using 100 kV Electron Beam System JBX-9300FS We evaluated the performance of 100-kV point electron-beam lithography system: JBX-9300FS and developed Mix and Match lithography process. Resolution on resist exposure is 30-nm using commercially available chemically amplified resist and is down to 10-nm-order using Calixarene resist. For high-throughput lithography, Mix-and-Match lithography process was developed including pattern preparation, and EB exposure time decreased in 1/3. These process technologies are useful for development advanced CMOS devices. Showing 0 Comment Comments are closed.