Process optimization for production of sub-20 nm soft x-ray zone plates October 21, 2020 Electron Beam Lithography, Photomask / Direct Write Lithography 0 We report here the optimization of processes for producing sub-20 nm soft x-ray zone plates, using a general purpose electron beam lithography system and commercial resist technologies. We have critically evaluated the failure point of the various process steps and where possible chosen alternate methods, materials, or otherwise modified the process. Advances have been made in most steps of the process, including the imaging resist, pattern conversion for electron beam exposure, and pattern transfer. Two phase shifting absorber materials, germanium and nickel with excellent quality using polymethyl methyl accrylate and zones as small as 20 nm have been fabricated in nickel using the calixarene resist. The total efficiency as well as the efficiency of different regions of the zone plates were measured. All zone plates have demonstrated good efficiencies, with nickel zone plates performing better than germanium zone plates. For full details: Attached files often contain the full content of the item you are viewing. Be sure and view any attachments. resources_se/Nanotech-27.pdf 466.48 KB Related Articles Diffractive x-ray optics using production fabrication methods Zone plates are the key focusing element for many x-ray (7–20 keV) and soft x-ray (200–500 eV) applications, yet, production with electron-beam lithography poses obstacles to their widespread availability. In addition, fabrication processes to date have limited the studies of amplitude Bragg– Fresnel-type elements in the hard x-ray regime. We report new processes that couple 100 keV electron-beam lithography with established production methods to achieve two goals: (1) improving the overall yield and volume of ultrahigh-resolution soft x-ray zone plates and (2) applying deep silicon etching techniques to extend the state of the art in high aspect ratio Bragg–Fresnel optics required to create high efficiency focusing of high-energy x rays. Application of X-ray Mask Fabrication Technologies to High Resolution, Large Diameter Ta Fresnel Zone Plates The resolution of Fresnel zone plate (FZP) as X-ray lens is determined by the width of outer-most zone, and the diameter of condenser lens is desirable to be large so that bright x-ray beam is available in x-ray optical systems. As the diameter of FZPs with nm resolution reported so far is small, typically less than 0.2mm, FZPs cannot be used as effective condenser lens. Scanning transmission soft x-ray microscopy at beamline X-1A at the NSLS - advances in instrumentation and selected applications Soft x-ray scanning transmission x-ray microscopy allows one to image dry and wet environmental science, biological, polymer, and geochemical specimens on a nanoscale. Recent advances in instrumentation at the X-1A beamline at the National Synchotron Light Source at Brookhaven National Laboratory are described. Recent results on Nomarski differential phase contrast and first results of investigations at the oxygen K edge and iron L edge of hydrous ferric oxide transformations are presented. Single element kinoform hard x-ray micro-optic A Fresnel lens is a chromatic, but low-loss optic, that can be used as a hard x-ray focusing element. In order to maintain phase coherence across the lens for a given x-ray wavelength, and to maximize transmission, material is deleted that removes multiples of 2 pi phase-shift. Using planar micro-electronics technology we have fabricated refractive Fresnel lenses for hard X-rays in single crystal silicon, and with the ideal shape. Magnetization reversal processes in submicron Co dots and antidots arrays Arrays of submicron polycrystalline and epitaxially grown (1 0 0) hep Co dots and anitdots were prepared in order to study the magnetization reversal processes influenced by well defined anisotropy, dipolar and exchange fields. The magnetization reversal processes for both polycrystalline and epitaxial Co dot arrays are found to be initiated by domain wall nucleation. The domain wall propagation is regulated by the evolution of the effective internal field. The antidots exhibit perculiar stripe domains in the remanent state. The direction of the stripes is well determined by the applied magnetic field direction. Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System To increase the throughput of electron beam lithography used to fabricate sub- 100-nm patterns, we developed an electron beam and deep UV intra-level mix-and-match lithography process, that uses the JBX-9300FS point-electron-beam system and a conventional KrF stepper. Pattern data preparation was improved for sub- 100-nm patterns. To reduce the effect of line width variation caused by post-exposure delay on complementary metal-oxide-semiconductor (CMOS) devices, we first exposed KrF patterns and then added another post-exposure bake before the electron beam (EB) exposure. We have used this technique to expose the gate layer of sub- 100-nm CMOS devices. When we set the threshold size between EB and KrF patterns at 0.16 µm, the throughput of electron beam lithography was about threefold that of the full exposure by the electron beam lithography process. Sub-50-nm CMOS devices with high drive current were successfully fabricated. Showing 0 Comment Comments are closed.