Single element kinoform hard x-ray micro-optic October 22, 2020 Electron Beam Lithography, Photomask / Direct Write Lithography 0 A Fresnel lens is a chromatic, but low-loss optic, that can be used as a hard x-ray focusing element. In order to maintain phase coherence across the lens for a given x-ray wavelength, and to maximize transmission, material is deleted that removes multiples of 2 pi phase-shift. Using planar micro-electronics technology we have fabricated refractive Fresnel lenses for hard X-rays in single crystal silicon, and with the ideal shape. For full details: Attached files often contain the full content of the item you are viewing. Be sure and view any attachments. resources_se/Nanotech-53.pdf 11.23 KB Related Articles Diffractive x-ray optics using production fabrication methods Zone plates are the key focusing element for many x-ray (7–20 keV) and soft x-ray (200–500 eV) applications, yet, production with electron-beam lithography poses obstacles to their widespread availability. In addition, fabrication processes to date have limited the studies of amplitude Bragg– Fresnel-type elements in the hard x-ray regime. We report new processes that couple 100 keV electron-beam lithography with established production methods to achieve two goals: (1) improving the overall yield and volume of ultrahigh-resolution soft x-ray zone plates and (2) applying deep silicon etching techniques to extend the state of the art in high aspect ratio Bragg–Fresnel optics required to create high efficiency focusing of high-energy x rays. Application of X-ray Mask Fabrication Technologies to High Resolution, Large Diameter Ta Fresnel Zone Plates The resolution of Fresnel zone plate (FZP) as X-ray lens is determined by the width of outer-most zone, and the diameter of condenser lens is desirable to be large so that bright x-ray beam is available in x-ray optical systems. As the diameter of FZPs with nm resolution reported so far is small, typically less than 0.2mm, FZPs cannot be used as effective condenser lens. Nanofabrication of subwavelength, binary, high-efficiency diffractive optical elements in GaAs A single-etch-step process for the fabrication of high-efficiency diffractive optical elements is presented. The technique uses subwavelength surface relief structures to create a material with an effective index of refraction determined by the fill factor of the binary pattern. Fabrication is performed using electron beam lithography and reactive-ion-beam etching on bulk GaAs, but the process is applicable to any material for which well-controlled etches exist. In this work, we designed and fabricated a blazed transmission grating for operation at 975 nm. The blazed grating exhibits a diffraction efficiency into the first order of 85% of the transmitted power, Scanning transmission soft x-ray microscopy at beamline X-1A at the NSLS - advances in instrumentation and selected applications Soft x-ray scanning transmission x-ray microscopy allows one to image dry and wet environmental science, biological, polymer, and geochemical specimens on a nanoscale. Recent advances in instrumentation at the X-1A beamline at the National Synchotron Light Source at Brookhaven National Laboratory are described. Recent results on Nomarski differential phase contrast and first results of investigations at the oxygen K edge and iron L edge of hydrous ferric oxide transformations are presented. Cu Single Damascene Interconnects with Plasma-polymerized Organic Polymers (k=2.6) for High-speed, 0.1µm CMOS devices For high-speed CMOS devices, triple-layered Cu single damascene interconnects (SDI) with Cu-via plugs are fabricated in hybrid dielectric films of plasma-polymerized divinylsiloxan benzocyclobuten film (p-BCB: k=2.6) and p-CVD SiO2. No degradation of 0.1µm MOSFETs is observed after the full interconnect integration through MOCVD-Cu filling and pad-scanning, local-CMP for Cu polish. The stacked Cu-pads in the high modulus p-BCB film (19Gpa) withstand sever mechanical impact during Al wire bonding. The 0.08µm CMOS transmitter, which consists of 32:8 pre-multiplexer (MUX), 8B10B encoder, 10:1 MUX and DATA driver, is obtained successfully to generate high-speed serial signals up to 6Gb/s. This fabrication process is a key to obtain the high speed CMOS devices with low-k/Cu interconnects. Process optimization for production of sub-20 nm soft x-ray zone plates We report here the optimization of processes for producing sub-20 nm soft x-ray zone plates, using a general purpose electron beam lithography system and commercial resist technologies. We have critically evaluated the failure point of the various process steps and where possible chosen alternate methods, materials, or otherwise modified the process. Advances have been made in most steps of the process, including the imaging resist, pattern conversion for electron beam exposure, and pattern transfer. Two phase shifting absorber materials, germanium and nickel with excellent quality using polymethyl methyl accrylate and zones as small as 20 nm have been fabricated in nickel using the calixarene resist. The total efficiency as well as the efficiency of different regions of the zone plates were measured. All zone plates have demonstrated good efficiencies, with nickel zone plates performing better than germanium zone plates. Showing 0 Comment Comments are closed.