Ultrafast Elemental Mapping of S/TEM Samples

This next-generation Silicon Drift Detector (SDD) EDS from JEOL collects X-rays from S/TEM samples at an unprecedented large solid angle of up to 0.98 steradians from a detection area of 100mm².

Through efficient collection of X-rays at very high count rates, the detector's design speeds elemental mapping and improves element detection sensitivity without loss of energy resolution. Large pixel number EDS maps can be made at rates ten times faster than with the previous EDS designs, with excellent signal-to-noise ratio. Combined with the large probe currents in small probe sizes attainable with aberration corrected STEM, fast, efficient atomic resolution EDS analysis is possible.

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JEOL's large angle SDD EDS with large solid angle used to detect single atoms within a nanostructure

Watch news from the tradeshow floor:

• Tom Isabell, director of JEOL’s TEM division, talks about the new EDS detector for JEOL’s TEMs.

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