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Large Angle SDD-EDS

Ultrafast Elemental Mapping of S/TEM Samples

This next-generation Silicon Drift Detector (SDD) EDS from JEOL collects X-rays from S/TEM samples at an unprecedented large solid angle of up to 2.21 steradians from a detection area of 158mm2.

Through efficient collection of X-rays at very high count rates, the detector's design speeds elemental mapping and improves element detection sensitivity without loss of energy resolution. Large pixel number EDS maps can be made at rates 25 times faster than with the previous EDS designs, with excellent signal-to-noise ratio. Combined with the large probe currents in small probe sizes attainable with aberration corrected STEM, fast, efficient atomic resolution EDS analysis is possible.

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Spotlight

As described in Physics World, JEOL's large angle SDD EDS with large solid angle was used to detect single atoms within a nanostructure. The research was published in Nature Photonics.

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Key Features

  • High sensitivity, high throughput analysis.
  • Exponentially expands the elemental mapping capability for the JEOL 200kV and higher nano-area analysis TEM.
  • The automatically retractable side entry design allows fast repositioning to avoid irradiation from back-scattered electrons.

Resources

Live-time DRAM Map analysis using Large Angle SDD-EDS mounted on JEOL ARM200

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