Photomask / Direct Write Lithography Documents

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Evaluation of a 100 kV TFE Electron Beam Nanolithography System

We report on the results of a series of performance evaluation tests of a JEOL model JBX-9300FS electron beam nanolithography system - a next generation spot beam lithography tool. The electron optics feature a high brightness thermal field emission cathode, 100 kV accelerating voltage, and a two stage deflector which is currently operating at a 25MHz deflection rate. The system is the first to use a high precision 20 bit DAC to achieve 1 nm addressability over a 500 µm writing field. The stage has a 255 x 235 mm range of motion in X and Y, respectively and is configured to load 300mm wafers. The stage is positioned with a laser interferometer with a resolution of 0.6 nm.

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