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Lithographic Performance and Mix-and-Match Lithography using 100 kV Electron Beam System JBX-9300FS

We evaluated the performance of 100-kV point electron-beam lithography system: JBX-9300FS and developed Mix-and-Match lithography process. Resolution on resist exposure is 30-nm using commercially available chemically amplified resist and is down to 10-nm-order using Calixarene resist. For high-throughput lithography, Mix-and-Match lithography process was developed including pattern preparation, and EB exposure time decreased to 1/3. These process technologies are useful for development of advanced CMOS devices.

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