New Failure Analysis Tool from JEOL
February 13, 2007, Peabody, MA – The high spatial resolution and flexibility of the JEOL Beam Tracer allows this new failure analysis tool to precisely locate and mark defect sites in multi-layer semiconductor devices. The Beam Tracer images marginal and failed interconnects and junctions through several complex layers. It allows measurement of individual transistors, performs electrical characterization, and includes a patented Voltage Distribution Contrast method for devices produced under the 65nm design rule.
A precision ...