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JBX-3050MV Electron Beam Lithography System

JBX-3040MVThe JBX-3050MV series is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 to 32 nm. This system features pattern writing with high speed, high accuracy and high reliability, achieved by high-end technology.

JBX-3050MV Key Product Features

Exposure Method Vector scan, Variable shaped beam
Accelerating Voltage 50 kV
Electron Gun Emitter LaB6 single crystal
Pattan </= ± 4 nm (3δ)
Writing Position Accuracy </= ± 10 nm