JEOL USA Electron Beam Lithography

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PRODUCTS : Semiconductor Equipment : Electron Beam Lithography

Semiconductor
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Electron Beam Lithography

JFAS-7000BT Beam Tracer

WM-7000

WM-10

WM-7

Fine Process Inspection

JFS-9855S

JEM-9320FIB

EMU-220/330

Semiconductor
Resources

Documents & Downloads

JEOL Electron Beam Lithography

We offer the widest range of e-beam tools for mask, reticle, and direct-write lithography, from high volume production to advanced research and development of NIL, photonic crystals, and sub-10 nanometer linewidths. Whether your applications are for next generation and beyond, production of ultra-high accuracy reticles and FET devices, ASIC fabrication, or direct pattern lithography on wafers, JEOL has a solution. We also offer an FEG SEM that is expandable for simple lithography and research applications.

Available Models

	Emitter	Accelerating Voltage	Min. Beam Size	Wafer Size	Beam Shape	Deflection
JBX-3050MV	LaB₆ single crystal	50 kV		Substrate Size: 6 inch mask	Variable shaped	Vector scan
JBX-5500FS	ZrO/W TFE	50 kV / 25 kV	2nm	100mm wafer	Spot	Vector scan
JBX-6300FS	ZrO/W (Schottky)	100 kV / 50 kV / 25 kV	2nm	Up to 200mm wafer	Spot	Vector scan
JBX-9300FS	ZrO/W (Schottky)	100 kV / 50 kV	4nm (100 kV) 7nm (50 kV)	Up to 300mm wafer	Spot	Vector scan

Newest Documents in the Resource Library

	JEOL E-Beam Lithography Application Notes A selection of scientific/data references for JEOL JBX series of e-beam tools.	7/30/2007
	Single-mode Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications High power single mode, tunable, narrow linewidth semiconductor lasers in the 2.05 um wavelength region are needed for coherent detection optical remote sensing applications. 2.05 um Fabry Perot (FP) and distributed feedback (DFB) ridge waveguide lasers fabricated from epitaxially grown InGaAsSb/AlGaAsSb/GaSb and InGaAs/InP heterostructures are reported.	7/29/2007
	MIC (Mikroelektronik Centret) 2002 Annual Report	7/29/2007
	Topology optimization and fabrication of photonic crystal structures Topology optimization is used to design a planar photonic crystal waveguide component resulting in significantly enhanced functionality.	7/29/2007
	8-Wavelength DBR Laser Array Fabricated with a Single-Step Bragg Grating Printing Technique An 8-wavelength DBR array for narrow channel wavelength division multiplexing (WDM) has been fabricated with a new technique for printing first-order Bragg gratings using a phase mask and a conventional incoherent source.	7/29/2007
	Subwavelength, binary lenses at infrared wavelengths We describe the nanofabrication of subwavelength, binary lenses in GaAs for operation in the infrared.	7/29/2007
	Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection.	7/29/2007
	Phase holograms in polymethyl metacrylate Complex computer generated phase holograms (CGPHs) have been fabricated in polymethyl methacrylate (PMMA) by partial exposure and subsequent partial development.	7/29/2007
	Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap A new three-dimensional photonic crstal structure is designed to simplify fabrication.	7/29/2007
	Fabrication of Nano-Structures using EB-Lithography and its Application to Long-Wavelength Quantum-Wire Lasers In this work, 1.5um-wavelength GaInAsP/InP quantum wire lasers were fabricated by electron beam (EB) lithography, and wet chemical etching followed by embedding organic metal vapor phase epitaxy (OMVPE) growth.	7/29/2007