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Thursday, May 17, 2012
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JEOL Transmission Electron Microscopes
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Application Images
  • Detection of light elements with excellent energy resolution.
  • High sensitivity for low energy X-rays.
  • High speed EDS mapping
    As-doped transistor area
    Mag: X400K
  • High speed EDS mapping
    Au on TiO2 catalyst
    Mag: X1.5M
  • Atomic resolution EDS mapping
    SrTiO3
    Mag: X80M
  • Atomic resolution EDS mapping
    GaAs
    Mag: X150M
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Centurio Large Angle SDD-EDS

Ultrafast Elemental Mapping of S/TEM Samples

Centurio is a next-generation Silicon Drift Detector (SDD) EDS that collects X-rays from S/TEM samples at an unprecedented large solid angle of up to 0.98 steradians from a detection area of 100mm2.

Through efficient collection of X-rays at very high count rates, Centurio speeds elemental mapping and improves element detection sensitivity without loss of energy resolution. Large pixel number EDS maps can be made at rates ten times faster than with the previous EDS designs, with excellent signal-to-noise ratio. Combined with the large probe currents in small probe sizes attainable with aberration corrected STEM, fast, efficient atomic resolution EDS analysis is possible.

Centurio Large Angle SDD-EDS Details
  • High sensitivity, high throughput analysis
  • Exponentially expands the elemental mapping capability for the JEOL 200kV and higher nano-area analysis TEM.
  • The automatically retractable side entry design allows fast repositioning to avoid irradiation from back-scattered electrons.

 

  • Solid angle
         - High resolution polepiece 0.98 sr
         - Ultrahigh resolution polepiece 0.8 sr
  • Detection area 100mm2
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