Ben Stibbs E.'s Blog
Silicon drift detectors (SDDs) fit into energy dispersive spectroscopy (EDS) by enabling high count rates, low noise, improved energy resolution, and energy mapping.
E-beam lithography enables sub-10 nm patterning for prototyping, masks, and quantum devices with JEOL’s high-precision JBX systems.
An electron beam's nanometer-scale focus enables sub-10 nm lithography with unmatched precision and minimal blur.
In our article, we consider how e-beams are essential for overcoming key challenges in DRAM transistor formation. Discover more about their impact here.
Field ionization works by using intense electric fields to remove electrons, preserving molecular ions for mass analysis and composition determination.
Read through our introduction to FIB-SEM to discover more about this technique, including what it is, how it works, its advantages, and applications.
Atomic-level SEM and TEM analysis is essential for hybrid bonding, void detection, and copper interface reliability in advanced packaging.
Metrology is used in failure analysis to generate precise, traceable measurements that reveal defect size, geometry changes, and material issues.
FinFETs use a 3D fin-shaped channel for superior gate control, enabling low-leakage, high-speed transistors at advanced semiconductor nodes.