How is Metrology Used in Failure Analysis?
Every credible failure analysis is supported through metrology, the science of measurement. When a component, material, or system fails, engineers need more than visual clues. They require quantitative data that reveals how and why the failure occurred. In semiconductor devices, where functionality depends on nanoscale geometries, interface integrity, and material uniformity, metrology is essential for distinguishing normal process variation from true failure mechanisms. By characterizing geometry, surface features, and internal structure with traceable accuracy, it ensures the analysis is grounded in verifiable results and stands as a reliable determination of the underlying cause of failure.
Why Measurement Quality Matters in Failure Analysis
Before engineers can test a hypothesis, they must record exactly how the part failed, as these details are what enable a failure analysis to be trustworthy. Without reliable data, conclusions are speculative and corrective actions may miss the true cause of failure. Accurate metrology turns observation into quantifiable fact, ensuring each dimension, defect, and deviation is captured with confidence.
In practice, this means:
- Quantifying geometry and defects - reveals how features such as crack width, distortion, void size, and coating thickness contributed to failure.
- Comparing "as-failed" to "as-designed"- identifies if dimensions have drifted beyond tolerance and where a process or material deviation occurred.
- Ensuring traceability and reproducibility - provides calibrated, uncertainty-defined results that can withstand quality or warranty scrutiny.
When measurement quality is strong, engineers can trust the data enough to trace the failure back to its true cause and understand how it developed in the first place.
How Metrology Is Used in Failure Analysis
1. Initial visual and dimensional inspection
The process starts with a non-destructive evaluation of the failed part. Optical or coordinate measurements capture overall geometry, identifying distortion or dimensional drift relative to design drawings. Collecting these measurements early helps engineers preserve the "as-failed" condition before moving on to further testing.
2. Surface metrology and form measurement
Scanning electron microscopy (SEM) delivers surface metrology that reveals fine details of pattern deformation, line-edge roughness, contamination, and localized damage within semiconductor structures. Quantifying roughness and topography uncovers how stress, friction, or environmental conditions contributed to the failure.
3. Internal defect detection
Focused Ion Beam (FIB) 3D reconstruction provides high-resolution, site-specific internal metrology by sequentially milling and imaging material volumes at the nanoscale. This approach enables engineers to visualize and measure buried voids, interconnect discontinuities, delamination, and interface defects that cannot be resolved through surface inspection alone and are often responsible for electrical or reliability failures in semiconductor devices.
4. Cross-section and microstructural metrology
If destructive sectioning is needed, optical or electron microscopy measures grain size, inclusion distribution, or microcrack geometry to determine whether the cause of failure lies in material quality or processing.
5. Correlation with design and process data
Metrology measurements are compared with design tolerances and manufacturing records to locate where deviation occurred, be it in raw material, machining, or assembly.
6. Validation and modeling
Dimensional and microstructural data generated through metrology feed directly into computational models such as finite-element analysis (FEA). Using real, measured parameters, engineers can simulate stress propagation or fatigue behavior to assess how well the modeled mechanism matches the failure observed.
Throughout the investigation, metrology is able to supply consistent data that supports the failure analysis, allowing engineers to connect observation with the mechanisms that contributed to the defect and identify the improvements that can prevent it from recurring.
Techniques That Enable Quantitative Failure Analysis
Failure analysis draws on several branches of metrology, which offer unique insight into geometry, surface condition, or internal structure:
- Dimensional metrology- Coordinate measuring machines (CMMs), laser trackers, and optical scanners quantify part geometry and tolerance drift.
- Surface metrology- Stylus and optical profilometers measure roughness and waviness, while SEM provides high-resolution images of fracture surfaces and wear tracks.
- Internal defect metrology-Internal defect metrology- X-ray and CT scanning allow for the measurement of internal voids, inclusions, or delamination without altering the sample.
- Electron microscopy-based metrology- SEM and Transmission Electron Microscopy (TEM) measure micro- and nano-scale features such as inclusions and interface integrity.
- Analytical extensions- Energy-dispersive X-ray spectroscopy (EDS), electron energy loss spectroscopy (EELS), and mass spectrometry add chemical information that links structure to composition.
Together, these complementary metrology techniques support evidence-based failure analysis across a range of industries, including aerospace and energy.
How Electron Microscopy Is Used in Semiconductor Failure Analysis
In the semiconductor industry, where critical features reach the nanometer scale, Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy associated with Focused Ion Beam (SEM/FIB) provide the resolution to identify failures within complex device architectures, including dislocations, voids, interface defects, and other nanoscale features that influence device performance.
A typical semiconductor failure-analysis workflow includes:
- Fault localization- Electrical testing or SEM identifies the suspect region.
- Sample preparation- FIB milling thins the site to tens of nanometers, generating an electron-transparent lamella.
- TEM or STEM imaging- High-energy electrons pass through the sample, revealing dislocations, voids, or interface defects with atomic-scale clarity.
- Analytical mapping- EDS and EELS quantify elemental distribution and chemical bonding to connect material changes with electrical behavior.
- Correlation- JEOL software enables quantitative metrology of critical dimensions within device features, such as interconnects, gate structures, dielectric layers, and material interfaces, allowing engineers to confirm whether voids, oxide breakdown, or interface defects caused the functional failure.
SEM, FIB, and TEM metrology supplies evidence that engineers can use to diagnose device failures accurately and make informed changes that enhance manufacturing outcomes.
Strengthening Failure Analysis with Metrology Solutions from JEOL USA
Modern failure analysis requires precise metrology tools that can measure and resolve defects and variations that lead to component or system issues, including nanoscale dimensional and material variations common in semiconductor devices. JEOL USA offers advanced electron microscopy, mass spectrometry, and electrical analysis systems that can characterize structural features, identify chemical contaminants, and locate electrical defects with high accuracy. Speak with JEOL USA to learn more about our available products, including our TEMs and SEMs, designed for
high-precision failure analysis and how they can help drive comprehensive, data-driven investigations that accelerate root-cause identification and support more resilient product development cycles.