Request Product InfoFind a Local OfficeSearch
 
JEOL
Sunday, April 20, 2014
Login
Register
JEOL Transmission Electron Microscopes
Also See
Link to Mobile
Application Images
Atomic resolution EDS mapping
GaAs
Mag: X150M
Atomic resolution EDS mapping
SrTiO3
Mag: X80M
High speed EDS mapping
Au on TiO2 catalyst
Mag: X1.5M
High speed EDS mapping
As-doped transistor area
Mag: X400K
High sensitivity for low energy X-rays.
Detection of light elements with excellent energy resolution.
Large Angle SDD-EDS

Ultrafast Elemental Mapping of S/TEM Samples

This next-generation Silicon Drift Detector (SDD) EDS from JEOL collects X-rays from S/TEM samples at an unprecedented large solid angle of up to 0.98 steradians from a detection area of 100mm2.

Through efficient collection of X-rays at very high count rates, the detector's design speeds elemental mapping and improves element detection sensitivity without loss of energy resolution. Large pixel number EDS maps can be made at rates ten times faster than with the previous EDS designs, with excellent signal-to-noise ratio. Combined with the large probe currents in small probe sizes attainable with aberration corrected STEM, fast, efficient atomic resolution EDS analysis is possible.

Large Angle SDD-EDS Details
  • High sensitivity, high throughput analysis
  • Exponentially expands the elemental mapping capability for the JEOL 200kV and higher nano-area analysis TEM.
  • The automatically retractable side entry design allows fast repositioning to avoid irradiation from back-scattered electrons.

 

  • Solid angle
         - High resolution polepiece 0.98 sr
         - Ultrahigh resolution polepiece 0.8 sr
  • Detection area 100mm2

 
  Copyright 2014 JEOL USA, Inc. | Privacy Statement | Terms Of Use
  Designed & Powered by the Swanzey Internet Group