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   SERVICE / SUPPORT : Applications Resources : Semiconductor Equipment  
Semiconductor
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JEOL E-Beam Lithography Application Notes
A selection of scientific/data references for JEOL JBX series of e-beam tools.
7/30/2007
Single-mode Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications
High power single mode, tunable, narrow linewidth semiconductor lasers in the 2.05 um wavelength region are needed for coherent detection optical remote sensing applications. 2.05 um Fabry Perot (FP) and distributed feedback (DFB) ridge waveguide lasers fabricated from epitaxially grown InGaAsSb/AlGaAsSb/GaSb and InGaAs/InP heterostructures are reported.
7/29/2007
MIC (Mikroelektronik Centret) 2002 Annual Report
7/29/2007
Topology optimization and fabrication of photonic crystal structures
Topology optimization is used to design a planar photonic crystal waveguide component resulting in significantly enhanced functionality.
7/29/2007
8-Wavelength DBR Laser Array Fabricated with a Single-Step Bragg Grating Printing Technique
An 8-wavelength DBR array for narrow channel wavelength division multiplexing (WDM) has been fabricated with a new technique for printing first-order Bragg gratings using a phase mask and a conventional incoherent source.
7/29/2007
Subwavelength, binary lenses at infrared wavelengths
We describe the nanofabrication of subwavelength, binary lenses in GaAs for operation in the infrared.
7/29/2007
Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection
We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection.
7/29/2007
Phase holograms in polymethyl metacrylate
Complex computer generated phase holograms (CGPHs) have been fabricated in polymethyl methacrylate (PMMA) by partial exposure and subsequent partial development.
7/29/2007
Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap
A new three-dimensional photonic crstal structure is designed to simplify fabrication.
7/29/2007
Fabrication of Nano-Structures using EB-Lithography and its Application to Long-Wavelength Quantum-Wire Lasers
In this work, 1.5um-wavelength GaInAsP/InP quantum wire lasers were fabricated by electron beam (EB) lithography, and wet chemical etching followed by embedding organic metal vapor phase epitaxy (OMVPE) growth.
7/29/2007
Advances in near field holographic grating mask technology
We report progress on several practical issues of near field holographic (NFH) printing for optoelectronic applications. In particular, we report on the following: adaptation of the mask making process to large area holographically generated grating masks; evaluation of a commercially available UV contact aligner modified to allow routine NFH printing; use of mask copies to avoid excessive wear on original masks; options for reducing the writing time for e-beam generated grating masks; and the application of e-beam generated grating masks to a DFB six-laser-array with 200-GHz frequency channel separation.
7/29/2007
Application of X-ray Mask Fabrication Technologies to High Resolution, Large Diameter Ta Fresnel Zone Plates
We have applied NTT X-ray mask fabrication technologies for SOR lithography to the fabrication of high resolution and large diameter FZP using Ta as X-ray absorber, and obtained 50 nm resolution, 1 mm diameter FZP on thin SiN membrane.
7/29/2007
Si-Based Photonic Crystals and Photonic-Bandgap Waveguides
We studied various types of 2D and 3D Si-based photonic crystal structures that are promising for future photonic integrated circuit application.
7/29/2007
Physical Review Letters (excerpts)
Confined Band Gap in an Air-Bridge Type of Two-Dimensional AIGaAs Photonic Crystal; Transmittance and time-of-flight study of photonic crystal waveguides.
7/29/2007
Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
Diamond molds were fabricated by two types of fabrication processes, both of which use a conductive intermediate layer between the diamond surface and polymethylmethacrylate (PMMA) resist to prevent surface charge-up. Using a PtPd intermediate layer, electron beam lithography and ion beam etching, a denting line pattern of 600nm width and 70nm depth was fabricated.
7/29/2007
  

 
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