Symmetry evaluation of vacancy structure in silicon single crystal
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- 1 MIN READ |
- 6 |
- September 1, 2026 |
- Electron Spin Resonance (ESR) |
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Application Note ER260005
Information obtained from ESR measurements
- Confirmation of the presence of defects
- Evaluation of defect symmetry
- Analysis of defect orientation
- Evaluation of the electronic states of defects
Example of Measurements on a Silicon Single Crystal
We present an example of defect structure evaluation based on the angular dependence of ESR signals. In silicon crystals, the resonance magnetic field and the g-value of an ESR signal vary with the orientation of the external magnetic field relative to the crystal axes ([100], [110], [111], etc.). Analysis of this angular dependence provides valuable information about the symmetry and electronic structure of vacancy-related defects.