Electron Optic Documents

JEOL’s in column Upper Electron Detector (Through The Lens Detector) provides not only ultra-high resolution imaging but also includes a user selectable energy filter allowing the user to study a sample under different contrast mechanisms. For example, this energy filter allows the user to select low energy secondary electrons (SE) to enhance topographic features or high energy backscatter electrons (BSE) to highlight atomic number contrast. This detector is especially useful at lower kVs.

The JEOL Environmental Airlock system allows for the simple transfer of reactive specimens to the SEM without being exposed to air. For specimens where any exposure to air or moisture can alter or destroy the structure, this system provides a cost effective and simple method to bring specimens from a glove box directly to the SEM.

In the last decade there has been a quantum leap in the ability of scanning electron microscopes to observe a variety of materials and biological specimens with ultrahigh resolution and exceptional surface detail, in particular employing low voltage SEM. Low voltage imaging has become a key technique for charge control and reduction, especially in the cases where no surface modification (for example conductive coating) can be employed to alleviate specimen charging during SEM observation.

The F2 is a new concept of 20-200kV TEM equipped with a Cold FEG. This new generation of multi-purpose electron microscope is designed specifically to meet today’s diversified needs. Transmission electron microscopy gives access to two-dimensional information coming from the sample. The third dimension is available thanks to the tomography technique. The sample is tilted and for each step, an image (TEM, STEM, EDS) is acquired. Then the 3D volume of the sample can be reconstructed. The F2 has a “Dual SDD system”, which is composed of two silicon drift detectors (SDD) with large sensor areas, resulting in a total solid angle of 1.7 sr. The combination of two detectors and their placement around the sample, allows the ability to record EDS information throughout the full tilt series (from -80° to +80°).

The F2 is a new concept of 20-200kV TEM equipped with a Cold FEG. This new generation of multi-purpose electron microscope is designed specifically to meet today’s diversified needs. Thanks to the high brightness and small probe size of the Cold FEG, the F2 is able to reach an unprecedented guaranteed resolution for STEM (0.14nm), EDS (1.7sr) and EELS (0.3eV) at the same time, creating a new class of high-end non-corrected TEM.

The F2 is a new concept of 20-200kV TEM equipped with a Cold FEG. This new generation of multi-purpose electron microscope is designed specifically to meet today’s diversified needs. Thanks to the high brightness and small probe size of the Cold FEG, the F2 is able to reach an unprecedented guaranteed resolution for STEM (0.14nm), EDS (1.7sr) and EELS (0.3eV) at the same time; creating a new class of high-end non-corrected TEM.

The F2 is a new concept of 20-200kV TEM. This new generation of multi-purpose electron microscope is designed specifically to meet today's diversified needs. Thanks to the high brightness and small probe size, the F2 is able to reach an unprecedented guaranteed resolution for STEM (0.14nm), EDS (1.7sr) and EELS (0.3eV) at the same time, creating a new class of high-end non-corrected TEM.

The F2 incorporates a new, intuitive user interface specifically designed for analytical electron microscopy. This new interface integrates many improvements for the TEM control, such as; automatic functions (auto brightness/contrast, auto focus, auto Z, auto stigmator), coma free auto alignment and off-line data processing (Analysis Center). The software can be tuned at your convenience to provide you with the best working environment.

Contamination and Off-Flavor; Evaluation and Analysis

One of the main imaging artifacts generated during specimen observation in SEM is specimen charging. The effect of charging manifests itself either via ‘flattening’ of the image due to the beam deflection close to the source of charging, or extremely high or low contrast and image distortion. This artifact can be substantially reduced by either application of conductive coating to the sample or by lowering the primary beam voltage. Contemporary FE-SEMs have the ability to produce nm size spot sizes even at 1kV and below, paving the way for high resolution imaging and analysis of nanomaterials and surfaces without the need for conductive coating.